Part Number: K2723
Function: N-Channel MOS Field Effect Power Transistor
Package: Isolated TO-220 Type
Manufacturer: NEC ( Renesas Technology )
Images :
Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.
Features
1. Low On-Resistance
(1) RDS (on) 1 = 40mW Max. (VGS = 10 V, ID = 13 A)
(2) RDS (on) 2 = 60mW Max. (VGS = 4 V, ID = 13 A)
2. Low Ciss Ciss = 830 pF Typ.
3. Built-in G-S Protection Diode
4. Isolated TO-220 Package
5. SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
Absolute Maximum Ratings
1. Drain to Source Voltage : VDSS = 60 V
2. Gate to Source Voltage : VGSS = ±20 V
3. Drain Current (DC) : ID (DC) = ±25 A
4. Drain Current (pulse) : ID (pulse) = ±100 A
5. Total Power Dissipation (TA = 25 °C) : PT = 2.0 W
6. Total Power Dissipation (Tc = 25 °C) : PT = 25 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = -55 to +150 °C
Other data sheets are available within the file: 2SK2723, 2SK2723(JM), K2723(JM)