Part Number: K2847
Function: 900V, 8A, N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Toshiba
Image:
Description
This is 900V, 8A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain−source ON resistance : RDS(ON) = 1.1 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 8 A
4. Drain Power Dissipation: Pd = 85 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. DC-DC Converter and Motor Drive
Other data sheets are available within the file: 2SK2847
K2847 Datasheet PDF Download
