Part Number: K2959
Function: 50A, 30V, N-Channel MOSFET
Package: TO-220AB Type
Manufacturer: Hitachi ( Renesas Electronics )
Image and Pinouts:
This is Silicon N-Channel MOSFET.
1. Low on-resistance : RDS(on)= 7mΩ typ.
2. 4V gate drive devices.
3. High speed switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
5. Body-drain diode reverse drain current : IDR = 50 A
6. Channel dissipation: Pch = 75 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C
1. High Speed Power Switching
Other data sheets are available within the file: 2SK2959
K2959 Datasheet PDF Download