The 2SK3565 is one of the MOSFET types..
The Part Number is K3565, 2SK3565.
The function of this semiconductor is 900V, 5A, N-Channel MOSFET.
Manufacturer: Toshiba Semiconductor
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Description
K3565 is 900V, 5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
Features
• Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 595 mJ
6. Avalanche current : IAR = 5 A
7. Repetitive avalanche energy (Note 3) : EAR = 4.5 mJ
8. Channel temperature: Tch = 150 °C
Applications:
1. Switching Regulator