K3569 MOSFET – 600V, 10A, Transistor, N-Ch, 2SK3569

Part Number: K3569, 2SK3569

Function: 600V, 10A, N-Channel MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:K3569 pdf pinout


K3569 is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.


• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K3569 datasheet transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain power dissipation : Pch = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


1. Switching Regulator


K3569 PDF Datasheet