Part Number: K3797, 2SK3797
Function: N-Channel MOSFET ( Vdss = 600V, Vdgr = 600V )
Package: TO-220 type
Manufacturer: Toshiba Semiconductor
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Description
This is 600V, 30A, Silicon N-Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON resistance: RDS (ON)= 0.32Ω(typ.)
2. High forward transfer admittance: |Yfs| = 7.5 S (typ.)
3. Low leakage current: IDSS= 100 μA (VDS= 600 V)
4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 13 A
4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K3797 Datasheet PDF
