K3878 PDF Datasheet – 900V, 9A, MOSFET – 2SK3878

Part Number: K3878

Function: 900V, 9A, Field Effect Transistor

Package: TO-3PN Type

Manufacturer: Toshiba

Images:K3878 pdf pinout

Description

K3878 is 900V, 9A, Silicon N-Channel MOSFET (2SK3878). An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

 

Features

1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

K3878 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Total Power Dissipation: Pd = 150 W

5. Avalanche energy: Ear = 15 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K3878 PDF Datasheet