Part Number: K4111, 2SK4111
Function: 600V, 10A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
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Description
The K4111 is 600V, 10A, Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor.
In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features
1. Low drain-source ON resistance: RDS (ON)= 0.54 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 8.5S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
