K6A60D PDF Datasheet

Part Number: K6A60D, TK6A60D

Function: 600V, 6A, N-Channel MOSFET

Package: TO-220 type

Manufacturer: Toshiba Semiconductor

Images:

1 page
K6A60D transistor datasheet

Description

K6A60D is 600V, 6A, Silicon N Channel MOS Type Field Effect Transistor.

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

• High forward transfer admittance: |Yfs| = 3.0 S (typ.)

• Low leakage current: IDSS = 10 μA (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

3 page
K6A60D pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V

2. Gate-source voltage : VGSS = ±30 V

3. Drain power dissipation (Tc = 25°C): PD = 40 W

4. Single pulse avalanche energy (Note 2) : EAS = 173 mJ

5. Avalanche current : IAR = 6 A

6. Repetitive avalanche energy (Note 3) : EAR = 4.0 mJ

7. Channel temperature: Tch = 150 °C

Applications:

1. Switching Regulator