Part Number: K6A60D, TK6A60D
Function: 600V, 6A, N-Channel MOSFET
Package: TO-220 type
Manufacturer: Toshiba Semiconductor
Images:
1 page
Description
K6A60D is 600V, 6A, Silicon N Channel MOS Type Field Effect Transistor.
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features
• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3 page
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 600 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain power dissipation (Tc = 25°C): PD = 40 W
4. Single pulse avalanche energy (Note 2) : EAS = 173 mJ
5. Avalanche current : IAR = 6 A
6. Repetitive avalanche energy (Note 3) : EAR = 4.0 mJ
7. Channel temperature: Tch = 150 °C
Applications:
1. Switching Regulator
K6A60D PDF Datasheet
Posts related to ‘ 600V ‘
| Part number | Description |
| 13N60M2 | N-Ch, 600V, 11A, MOSFET (Transistor) |
| P7NA60 | 600V, N-Channel MOSFET |
| Z3M | 600V, 1A, Triac – STMicro |
| 2SC5778 | Vcbo=1600V, NPN Transistor – Sanyo |
| FR105 | 1.0A, 600V, Recovery Rectifier Diode |
| G40N60A4 | G40N60A4 PDF – 600V, IGBT, HGTG40N60A4 |
| P2NC60FP | P2NC60FP PDF – 600V, 1.9A, MOSFET – STP2NC60FP |
| K3502-01MR | K3502-01MR PDF – 600V, Transistor – 2SK3502-01MR |
| Z00607MA | 0.8A, 600V, Sensitive Gate Triac |
| K20A60U | 600V, 20A, MOSFET, TK20A60U |