Part Number: K6A60D, TK6A60D
Function: 600V, 6A, N-Channel MOSFET
Package: TO-220 type
Manufacturer: Toshiba Semiconductor
Images:
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Description
This is Silicon N Channel MOS Type Field Effect Transistor.
Features
• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
1. Drain-source voltage: VDSS = 600 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain power dissipation (Tc = 25°C): PD = 40 W
4. Single pulse avalanche energy (Note 2) : EAS = 173 mJ
5. Avalanche current : IAR = 6 A
6. Repetitive avalanche energy (Note 3) : EAR = 4.0 mJ
7. Channel temperature: Tch = 150 °C
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Applications:
1. Switching Regulator