K6A650 PDF Datasheet – 650V, N-Ch, MOSFET ( TK6A65D )

Part Number: K6A650, Correct Part Number: K6A65D, TK6A65D

Function: 650V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K6A650 transistor datasheet mosfet TK6A65D

Description

The K6A650 is 650V, 6A, N-channel MOSFET.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features:

1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Applications:

1.Switching Regulator

Pinout:

K6A650 pinout K6A650D

[…]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS =  ± 30 V
3. Drain current: ID =  6 A
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = +150 °C

K6A65D Datasheet

K6A650-pdf pdf