K8A65D, TK8A65D MOSFET Transistor learn more.
This mosfet function is Switching Regulator.
Part Number: K8A65D ( Marking code )
Function: Silicon N Channel MOSFET ( Field Effect Transistor )
Package: TO-220 Type
Manufacturer: Toshiba
Image
Description
This is 650V, 8A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 4.5 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 650 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain power dissipation (Tc = 25°C): PD = 45 W
4. Single pulse avalanche energy : EAS = 416 mJ
5. Avalanche current : IAR = 8 A
6. Repetitive avalanche energy : EAR = 4.5 mJ
7. Channel temperature: Tch = 150 °C
8. Storage temperature range : Tstg = -55 to 150 °C
Other data sheets are available within the file: TK8A65D
K8A65D Datasheet PDF Download
