K900 Datasheet – 250V, 12A, N-Ch, Power MOSFET – Fuji

Part Number: K900, 2SK900

Description

250V, 12A, N-Channel Silicon Power MOSFET

Package: TO-220AB

Manufacturer: Fuji Electric

Image

K900 mosfet

Description

This is N-Channel Silicon Power MOSFET.

Features

1. High speed switching
2. Low on-resistance
3. No secondary breakdown
4. Low driving power

Pinout

K900 pinout image

Applications

1. UPS
2. DC-DC Converters
3. General purpose power amplifier

Absolute maximum ratings ( Tc=25°C )

1. Drain-source voltage : Vdss = 250 V
2. Continuous drain current : Id = 12 A
3. Pulsed drain current : Id(puls) = 48 A
4. Max. Power Dissipation: Pd = 80 W
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -55 ~ +150°C

K900 Datasheet

K900 Datasheet

 

K900 pdf

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