Part Number: MDF7N65B
Function: N-Channel MOSFET, 650V, 7.0A, 1.35Ω
Package: TO-220F Type
Manufacturer: MagnaChip Semiconductor
Images
Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-Source Voltage : VDSS = 650 V
2. Gate-Source Voltage :VGSS = ±30 V
3. Continuous Drain Current (Tc=25°C) : ID = 7.0 A
4. Pulsed Drain Current : IDM = 28 A
5. Power Dissipation (Tc=25°C): PD = 42W
6. Repetitive Avalanche Energy : EAR = 13.1 mJ
7. Peak Diode Recovery dv/dt : dv/dt = 4.5 V/ns
8. Single Pulse Avalanche Energy : EAS = 212 mJ
9. Junction and Storage Temperature Range : TJ, Tstg = -55~150 °C
Pinout
Applications
1. Power Supply
2. PFC
3. High Current, High Speed Switching
MDF7N65B Datasheet PDF Download
