What is MJE13003?
This is an NPN bipolar junction transistor designed for high-voltage, high-speed power switching applications. It has a maximum collector-emitter voltage rating of 400V and a maximum collector current rating of 1.5A.
Part Number: MJE13003
Function: 400V, 1.5A, Power Transistor
Package: TO-220, TO-251, TO-126, TO-252
Manufacturer: Unisonic Technologies
Image and Pinouts:
Description
This is 400V, 1.5A, NPN Silicon Power Transistor. These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.
Features
1. Reverse biased SOA with inductive load @ TC=100°C
2. Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C.
3. 700V blocking capability
Advantages Vs Disadvantages
Advantages:
It is high voltage and current ratings, which make it suitable for use in high-power applications. It also has a fast switching speed, which allows for efficient power conversion.
Disadvantages:
This is its relatively low collector current rating compared to other power transistors on the market. This may limit its use in some high-power applications.
Additionally, it may require additional circuitry, such as a flyback diode, to protect against voltage spikes during switching.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 1.5 A
5. Collector Dissipation : Pc = 1.4 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. Switching regulator’s, inverters
2. Motor controls
3. Solenoid/relay drivers
4. Deflection circuits
Other data sheets are available within the file: 13003BR, 13003G, 13003L, MJE13003-TO-126