Part Number: RJH30E2
Function: 360V, 30A, IGBT
Package: TO-220 Type
Manufacturer: Renesas
Images:
Description
This is 360V, 30A, Insulated-gate bipolar transistor.
Features
(1) Trench gate and thin wafer technology (G6H-II series)
(2) High speed switching: tr =80 ns typ., tf = 150 ns typ.
(3) Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
(4) Low leak current: ICES = 1 mA max.
(5) Built-in Fast Recovery Diode
(6) Isolated package: TO-220FL.
RJH30E2 Renesas IGBT Vces = 360V, IC = 30A
