Part Number: RJH60F5DPQ
Function: 600V, 80A, Silicon N Channel IGBT
Package: TO-247A Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description
This is N-Channel IGBT. ( 600V / 80A / IGBT )
Features
1. Low collector to emitter saturation voltage :
VCE(sat)= 1.37 V typ. (IC= 40 A, VGE= 15 V, Ta = 25°C)
2. Built in fast recovery diode in one package
3. Trench gate and thin wafer technology
4. High speed switching tr= 85 ns typ.
(at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 80 A
4. Collector dissipation : Pc = 260.4 W
5. Junction temperature : Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed Power Switching
RJH60F5DPQ Datasheet PDF Download
Other data sheets are available within the file: RJH60F5, RJH60F5-DPQ, RJH60F5DPQ-A0