Part Number: RJK0389DPA
Function: 30V, Silicon N-Channel Power MOSFET
Package: 8 Pin WPAK-D2 Type
Manufacturer: Renesas Electronics
Image:
Description
This is N-Channel Power MOSFET with Schottky Barrier Diode
Features
1. Low on-resistance
2. Capable of 4.5 V gate drive
3. High density mounting
4. Pb-free
5. Halogen-free
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Channel dissipation: Pch = 10 W
4. Channel temperature: Tch = 150 °C
5. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed Power Switching
RJK0389DPA Datasheet PDF Download
Other data sheets are available within the file:
RJK0389, RJK0389DPA-00, RJK0389DPA-00-J53
