RJP30H2DPK-M0 Datasheet PDF - 360V, 35A, N-ch, IGBT

Part Number: RJP30H2DPK-M0

RENESAS Package code : PRSS0004ZH-A

Function: 360V, 35A, Silicon N Channel IGBT

Package: TO-3PSG

Images:

Description

This is 360V, 35A, N-channel IGBT.

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

3. High speed switching: tf = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES= 1 uA max

Pinout

Absolute Maximum Ratings

1. Collector to Emitter voltage : VCES = 360 V

2. Gate to Emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 250 A

5. Collector dissipation : PC = 60 W

6. Junction temperature : Tj = 150 °C

7. Storage temperature: Tstg = –55 to +150 °C

Applications:

1. High speed power switching

Other data sheets are available within the file: RJP30H2DPK, RJP30H2DPK-M0-T2