Part Number: RJP30K3DPP-M0
Function: 360V, 40A, N-Channel IGBT
Package: TO-220FL Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description
This is 360V, 40A, Silicon N Channel IGBT.
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.1V typ
3. High speed switching tr = 90 ns typ, tf = 250 ns typ
4. Low leak current ICES= 1 uA max
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 360 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 40 A
4. Collector dissipation : Pc = 30 W
5. Junction temperature : Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed Power Switching
Datasheet PDF Download
Other data sheets are available within the file: RJP30, RJP30K3DPP, RJP30K