RJP30K3DPP-M0 Datasheet PDF – 360V, 40A, N-Ch, IGBT

Part Number: RJP30K3DPP-M0

Function: 360V, 40A, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas Electronics

Image and Pinouts:

RJP30K3DPP-M0 datasheet

 

Description

This is 360V, 40A, Silicon N Channel IGBT.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage VCE(sat)= 1.1V typ

3. High speed switching tr = 90 ns typ, tf = 250 ns typ

4. Low leak current ICES= 1 uA max

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 40 A

4. Collector dissipation : Pc = 30 W

5. Junction temperature : Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

Datasheet PDF Download


RJP30K3DPP-M0 pdf

Other data sheets are available within the file: RJP30, RJP30K3DPP, RJP30K

 

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