Part Number: RJP63K2
Function: 630V, 35A, N-Channel IGBT
Package: TO-220FL Type
Manufacturer: Renesas Electronics
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Description
This is 630V, 35A, Silicon N Channel IGBT
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.
4. Low leak current: ICES= 1 uA max
5. Isolated package TO-220FL
Pinouts:
Absolute Maximum Ratings :
1. Collector to emitter voltage : VCES = 630 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : IC = 35 A
4. Collector peak current : ic(peak) = 200 A
5. Collector dissipation : PC = 25 W
Applications:
1. High Speed Power Switching
RJP63K2 Datasheet PDF
Other data sheets are available within the file: RJP63K2DPP-M0
