Part Number: STD3N25
Function: 3A, 250V, N-Channel MOSFET
Package: TO-251, TO-252 Type
Manufacturer: STMicroelectronics
Image and Pinouts:
Description
This is 250V, 3A, N-Channel MOSFET.
Features
1. TYPICAL RDS(on)= 1 Ω
2. AVALANCHE RUGGED TECHNOLOGY
3. 100% AVALANCHE TESTED
4. REPETITIVE AVALANCHE DATA AT 100°C
5. APPLICATION ORIENTED CHARACTERIZATION
6. THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1”)
7. SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
Absolute maximum ratings
1. Drain-source Voltage (VGS = 0) : VDS = 250 V
2. Drain- gate Voltage (RGS = 20 kW): VDGR = 250 V
3. Gate-source Voltage : VGS = ± 20 V
4. Drain Current (continuous) at Tc = 25 °C : ID = 3 A
5. Drain Current (continuous) at Tc = 100 °C : ID = 1.9 A
6. Drain Current (pulsed) : IDM = 12 A
7. Total Dissipation at Tc = 25 °C : Ptot = 45 W, Derating Factor 0.36 W/°C
8. Storage Temperature : Tstg = – 65 to 150 °C
9. Max. Operating Junction Temperature: Tj = 150°C
Applications
1. HIGH SPEED SWITCHING
2. UNINTERRUPTIBLE POWER SUPPLY (UPS)
3. MOTOR CONTROL, AUDIO AMPLIFIERS
4. INDUSTRIAL ACTUATORS
5. DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
6. PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS
Other data sheets are available within the file: D3N25, STD3N25-1, STD3N25T4
STD3N25 Datasheet PDF Download
