Part Number: STH8NB90FI
Function: 900V, 1.1 OHM, 8A , N-CHANNEL POWER MOSFET
Package: TO-247, ISOWATT218 Type
Manufacturer: STMicroelectronics
Pinouts:
Description
Using the latest high voltage MESH OVERAY process, STMicroelectronis has designed an advanved family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest Rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Features
1. TYPICAL RDS(on) = 1.1 W
2. EXTREMELY HIGH dv/dt CAPABILITY
3. 100% AVALANCHE TESTED
4. VERY LOW INTRINSIC CAPACITANCES
5. GATE CHARGE MINIMIZED
Absolute maximum ratings
1. Drain-source Voltage (VGS = 0) : VDS = 900 V
2. Drain-gate Voltage (RGS = 20 kW): VDGR = 900 V
3. Gate- source Voltage : VGS = ±30 V
4. Drain Current (continuos) at TC = 25°C : ID = 5 A
5. Total Dissipation at TC = 25°C : Ptot = 80 W
Applications
1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITH MODE POWER SUPPLIES (SMPS)
3. DC-AC CONVERTERS FOR WELDING EQUIPMENT
Other data sheets are available within the file: H8NB90FI, 8NB90FI, 8NB90, STW8NB90, STH8NB90
STH8NB90FI Datasheet PDF Download
