SVF12N60F Datasheet PDF – 600V, 12A, N-Channel MOSFET

Part Number: SVF12N60F

Function : 12A, 600V, N-Channel MOSFET

Package :  TO-220F-3L Pin Type

Manufacturer: Silan Microelectronics


SVF12N60F datasheet mosfet


The SVF12N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.


SVF12N60F pinout

1. 12A, 600V, RDS(on)(typ)=0.58Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Absolute maximum ratings ( Tc=25°C )

1. Drain-Source Voltage : VDS = 600 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : ID = 12 A
4. Drain Current Pulsed : IDM = 48 A
5. Power Dissipation: Pd = 51 W
6. Operation Junction Temperature Range : TJ = -55~+150 °C
7. Storage Temperature Range : Tstg = -55~+150 °C

Other data sheets are available within the file: SVF12N60, SVF12N60S, SVF12N60K

SVF12N60F Datasheet PDF

SVF12N60F pdf


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