Part Number: SVF4N60F
Function: 600V, 4A, N-Channel MOSFET
Package: TO-220F-3L Type
Manufacturer: Silan Microelectronics ( www.silan.com.cn )
Images:
Description
The SVF4N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Pinout:
Features
1. 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability
Absolute maximum ratings ( Tc=25°C )
1. Drain-Source Voltage : VDS = 600 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : Id = 4.0 A
4. Drain Current Pulsed : Idm = 16 A
5. Power Dissipation: Pd = 33 W
6. Single Pulsed Avalanche Energy : EAS = 217 mJ
7. Operation Junction Temperature Range : TJ = -55～+150°C
8. Storage Temperature Range : Tstg = -55～+150°C
Other data sheets are available within the file: SVF4N60D, SVF4N60T
SVF4N60F Datasheet PDF
