Part Number: SVF4N65F, SVF4N65T, SVF4N65FM
Function: 4A, 650V, N-CHANNEL MOSFET
Package: TO-220-3L, TO-220F-3L, TO-220F-3L, TO-251-3L Type
Manufacturer: Silan Microelectronics
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Description
The SVF4N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Pinout:
Features
1. 4A, 650V, RDS(on)(typ)=2.5Ω@VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability
Marking Information :
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 4 A
4. Drain Power Dissipation: Pd = 33 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C