SVF4N65F Datasheet PDF – 4A, 650V, N-Ch, MOSFET – Silan

Part Number: SVF4N65F, SVF4N65T, SVF4N65FM

Function: 4A, 650V, N-CHANNEL MOSFET

Package: TO-220-3L, TO-220F-3L, TO-220F-3L, TO-251-3L Type

Manufacturer: Silan Microelectronics

Image:

SVF4N65F mosfet

Description

The SVF4N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Pinout:

SVF4N65F datasheet pinout

Features

1.  4A, 650V, RDS(on)(typ)=2.5Ω@VGS=10V

2.  Low gate charge

3.  Low Crss

4.  Fast switching

5.  Improved dv/dt capability

Marking Information :

SVF4N65F order information

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 4 A

4. Drain Power Dissipation: Pd = 33 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

SVF4N65F Datasheet PDF

 

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