TA36N30P PDF Datasheet – 300V, 36A, Power MOSFET – IXYS

This post explains for the MOSFET.

The Full Part Number is IXTA36N30P, TA36N30P.

The function of this semiconductor is N-Channel Power MOSFET.

The pakcage is TO-263 Type

Manufacturer: IXYS Corporation

Preview images :

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TA36N30P pdf datasheet


TA36N30P is 300V, 36A, N-Channel Enhancement Mode PolarHT Power MOSFET.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.


1. International standard packages

2. Unclamped Inductive Switching (UIS) rated

3. Low package inductance

(1) easy to drive and to protect


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TA36N30P mosfet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 300 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 36 A

4. Drain Power Dissipation: Pd = 300 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


Advantages :

1. Easy to mount

2. Space savings

3. High power density


TA36N30P PDF Datasheet


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