TA36N30P PDF Datasheet – 300V, 36A, Power MOSFET – IXYS

This post explains for the MOSFET.

The Full Part Number is IXTA36N30P, TA36N30P.

The function of this semiconductor is N-Channel Power MOSFET.

The pakcage is TO-263 Type

Manufacturer: IXYS Corporation

Preview images :

1 page
TA36N30P pdf datasheet

Description

TA36N30P is 300V, 36A, N-Channel Enhancement Mode PolarHT Power MOSFET.

Features

1. International standard packages

2. Unclamped Inductive Switching (UIS) rated

3. Low package inductance

(1) easy to drive and to protect

 

2 page
TA36N30P mosfet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 300 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 36 A

4. Drain Power Dissipation: Pd = 300 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Advantages :

1. Easy to mount

2. Space savings

3. High power density

 

TA36N30P PDF Datasheet


 

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