JRC5532 PDF Datasheet – Dual Operational Amplifier

The JRC5532 is a dual operational amplifier (op-amp) integrated circuit (IC) manufactured by Japan Radio Corporation (JRC). It is commonly used in audio applications and is considered a high-performance op-amp.

Part Number: JRC5532

Function: Low Noise Dual Operational Amplifier

Package: DIP8, DMP8, SIP8 Type

Manufacturer: JRC ( New Japan Radio )

Images:JRC5532 pinout pdf


The NJM5532 is a high performance dual low noise operational amplifier. Compared to the standard dual operational amplifiers, such as the NJM1458,it shows better noise performance, improved output drive capability, and considerably higher small-signal and power bandwidths.

This makes the device especially suitable for application in high quality and professional audio equipment, instrumentation, control circuits, and telephone channel amplifiers. The op amp is internally compensated for gains equal to one if very low noise is of prime importance, version be used which has guaranteed NJM5532DD it is recommended that the noise specifications.

The JRC5532 features low noise, low distortion, and high gain bandwidth, making it suitable for various audio applications, including audio amplifiers, preamplifiers, equalizers, and audio mixers. It has two independent op-amps within a single IC package, allowing it to handle stereo or dual-channel audio signals.


JRC5532 datasheet image


1. Operating Voltage ( ±3V~±20V )
2. Small Signal Bandwidth ( 10MHz typ. )
3. Output Drive Capability ( 600Ω,10Vrms typ. )
4. Input Noise Voltage ( 5nV/√Hz typ. )
5. Power Bandwidth ( 140kHz typ. )
6. Slew Rate ( 8V/µs typ. )
7. Bipolar Technology

JRC5532 PDF Datasheet

2SK1422 MOSFET – 60V, 50A, Transistor ( Datasheet PDF )

Part Number: 2SK1422

Function: 60V, 50A, N-Ch, MOSFET

Package: TO-3PB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SK1422 datasheet



This is N-Channel Silicon MOSFET.


1. Low ON-state resistance.
2. Converters.
3. Ultrahigh-speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 50 A
4. Allowable Power Dissipation: Pd = 100 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C


Ultrahigh-Speed Switching

2SK1422 Datasheet PDF Download

2SK1422 pdf

Other data sheets are available within the file: K1422