igbt

RJP30H1DPD Datasheet PDF – 360V, 30A, N-Ch, IGBT

Posted on by pinout

Part Number: RJP30H1DPD

Function: 360V, 30A, N-Channel IGBT

Package: TO-252 Type

Manufacturer: Renesas Electronics

Image

rjp30h1dpd-igbt

 

Description

This is 360V, 30A, Silicon N-Channel IGBT.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

 

Pinouts:

RJP30H1DPD datasheet

 

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 30 A

4. Collector dissipation : Pc = 40 W

5. Junction temperature : Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP30H1DPD Datasheet

Applications:

1. High speed power switching

RJP30H1DPD Datasheet PDF


 

Related articles across the web

RJP30E2DPK-M0 Datasheet PDF – 360V, 35A, N-Channel IGBT

Posted on by pinout

Part Number: RJP30E2DPK-M0

Function: 360V, 35A, Silicon N Channel IGBT

Package: TO-3PSG Type

Manufacturer: Renesas Electronics

Image and Pinouts:

RJP30E2DPK-M0 datasheet

Description

This is 360V, 35A, Silicon N Channel IGBT.

The IGBT is insulated-gate bipolar transistor.

 

Features

1. Trench gate technology (G5H series)

2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

3. High speed switching  tf = 150 ns typ

4. Low leak current  ICES= 1 μA max

5. High Speed Power Switching / Vce(sat) = 1.7V typ

Absolute Maximum Ratings :

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 200 A

5. Collector dissipation : PC = 50 W

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: RJP30E2DPK, RJP30E2

RJP30E2DPK-M0 Datasheet PDF Download


RJP30E2DPK-M0 pdf