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45F122 Datasheet PDF – 300V, 200A, GT45F122, IGBT – Toshiba

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Part Number: 45F122, GT45F122

Function: 300V, 200A, Silicon N-Channel IGBT

Package: TO220SIS

Manufacturer: Toshiba

Images :
45F122 datasheet

Description

1. Breakdown Voltage VCES (V) @Ta = 25˚C = 300V
2. IGBT Current Rating IC (A) @Ta = 25˚C : 200A
3. Insulated Gate Bipolar Transistor
4. Case Style : TO220SIS

45F122 IGBT transistor

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.

Pinouts

45F122 pinout

On the other hand, the IGBT structure consists of a PNP bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat)curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques. Now, Toshiba offers even faster IGBTs with optimized carrier injection into the collector Player. In the future, Toshiba will launch IGBTs with varied characteristics optimized for high-current-conduction and  high-frequency-switching applications. The improvements in IGBTs will be spurred by optimized wafers, smaller pattern geometries and improved carrier lifetime control techniques.

Applications

1. PDP-TV
2. PDP sustain, energy recovery and separation circuits
3. Plasma display panels

Other data sheets are available within the file: 10G131, 30F122, 30G122, 45F122, 45F123

45F122 Datasheet PDF

45F122 pdf

Reference Datasheet

G4PF50W Datasheet – Vces=900V Discrete IGBT – Infineon

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Part Number: G4PF50W, IRG4PF50W

Function : 900V Warp 20-100 kHz Discrete IGBT

Package: TO-247AC Type

Manufacturer: Infineon ( http://www.infineon.com )

Image

G4PF50W IGBT IRG4PF50W

Features

1. Optimized for use in Welding and Switch-Mode Power Supply applications
2. Industry benchmark switching losses improve efficiency of all power supply topologies
3. 50% reduction of Eoff parameter
4. Low IGBT conduction losses
5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

 

Pinout

G4PF50W datasheet pinout

 

Benefits

1. Lower switching losses allow more cost-effective operation and hence efficient replacement of largerdie
MOSFETs up to 100kHz

2. Of particular benefit in single-ended converters and Power Supplies 150W and higher

3. Reduction in critical Eoff parameter due to minimal minority-carrier recombination coupled with low onstate losses

 

 

G4PF50W Datasheet


 

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