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FGA25N120AN PDF Datasheet – 1200V, 25A, IGBT, Transistor

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Part Number: FGA25N120AN

Function: 1200V, 25A, IGBT

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

Images:FGA25N120AN pdf pinout

Description

The FGA25N120AN is 1200V, 25A, IGBT (Insulated Gate Bipolar Transistor).

Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

The IGBT has several advantages over traditional power semiconductors, such as bipolar transistors and MOSFETs, making it a popular choice for high-power applications. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Features

1. High speed switching

2. Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A

3. High input impedance

FGA25N120AN igbt datasheet

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

FGA25N120AN PDF Datasheet

G23N60UFD PDF – 600V, 23A, IGBT – SGF23N60UFD

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Part Number: G23N60UFD, SGF23N60UFD

Function: 600V, 23A, IGBT

Package: TO-3PF Type

Manufacturer: Fairchild Semiconductor

Images:G23N60UFD pinout igbt

 

Description

G23N60UFD is 600V, 23A, Ultra-Fast IGBT. An Ultra-Fast IGBT (Insulated Gate Bipolar Transistor) is a specialized type of IGBT designed for applications that require fast switching speeds and reduced switching losses. IGBTs are semiconductor devices that combine the characteristics of both MOSFETs and bipolar transistors, making them suitable for high-power switching applications.

Fairchild’s Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required.

Ultra-Fast IGBTs find applications in various high-frequency power conversion systems, including induction heating, high-frequency switch-mode power supplies, renewable energy systems (such as solar inverters), and motor drives for high-performance electric vehicles and robotics.

Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A

• High Input Impedance

• CO-PAK, IGBT with FRD : trr = 42ns (typ.)

 

G23N60UFD pdf datasheet

Absolute Maximum Ratings (Tc = 25°C)

1. Collector to emitter Voltage: Vces = 600 V

2. Gate to emitter Voltage: Vges = ± 20 V

3. Collector Current: Ic = 23 A

4. Collector Dissipation: Pc = 75 W

5. Junction temperature: Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. AC & DC Motor controls, General Purpose Inverters

2. Robotics, Servo Controls

 

G23N60UFD PDF Datasheet