igbt

7MBR25UA120 PDF Datasheet – 1200V, 25A, IGBT MODULE

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Part Number: 7MBR25UA120

Function: 1200V, 25A, IGBT

Package: Module Type

Manufacturer: Fuji Electric

Images:7MBR25UA120 pdf igbt

Description

7MBR25UA120 is 1200V / 25A / PIM IGBT Module. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Features

1.  Low VCE(sat)

2. Compact Package

3. P.C. Board Mount Module

4. Converter Diode Bridge Dynamic Brake Circuit

7MBR25UA120 datasheet pinout

Applications:

1. Inverter for Motoe Drive

2. AC and DC Servo Drive Amplifier

3. Uninterruptible Power Supply

7MBR25UA120 PDF Datasheet

40N60NPFD Datasheet PDF – 40A, 600V, IGBT, Transistor

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This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor.

Marking : 40N60NPFD

Part Number: SGT40N60NPFDPN

Function: 40A, 600V, Field Stop IGBT

Package: TO-3P type

Manufacturer: silan Microelectronics

See the preview image and the PDF file for more information.

Image

40N60NPFD datasheet

Description

The 40N60NPFD using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A

2. Low conduction loss

3. Fast switching

4. High input impedance

pinout

40N60NPFD pinout

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage : VCE = 600 V

2. Gate to Emitter Voltage : VGE = ±20 V

3. Collector Current: Ic = 80 A

4. Pulsed Collector Current : ICM = 120 A

5. Maximum Power Dissipation (TC=25°C): PD = 290 W

6. Operating Junction Temperature TJ -55～+175 °C

7. Storage Temperature Range Tstg -55～+175 °C

40N60NPFD Transistor Datasheet

40N60NPFD pdf


 

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