Part Number: IRG4PC50F-E
Function: 600V, 70A, Fast Speed IGBT
Package: TO-247AD Type
Manufacturer: International Rectifier
Image and Pinouts:
Description
The IRG4PC50F-E is 600V, 70A, IGBT. The IGBT is insulated-gate bipolar transistor.
Features
1. Optimized for medium operating frequencies (1-5 KHz hin hard switching, >20 Khz in resonat mode).
2. Industry standard TO-247AD package
Benefits :
1. Generation 4 IGBT’s offer highest efficiency available
2. IGBT’s optimized for specified application conditions
3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 70 A (Tc = 25°C)
4. Maximum Power Dissipation : Pc = 200 W (Tc = 25°C)
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: IRG4PC50, IRG4PC50FE, IRG4PC50F-EPBF
IRG4PC50F-E Datasheet PDF Download
