Part Number: IKW25N120T2

Function: Low Loss DuoPack : 1200V, 25A, IGBT in 2nd generation TrenchStop

Package: TO-247-3 Pin Type

Manufacturer: Infineon Technologies

Image and Pinouts:

Description

The IKW25N120T2 is 1200V, 25A, IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

The IGBT has several advantages over traditional power semiconductors, such as bipolar transistors and MOSFETs, making it a popular choice for high-power applications. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Features

1. Short circuit withstand time – 10us

2. Designed for :
(1) Frequency Converters
(2) Uninterrupted Power Supply

3. TrenchStop 2nd generation for 1200 V applications offers :
(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behavior

4. Easy paralleling capability due to positive temperature coefficient in VCE(sat)

5. Low EMI

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 25 A (Tc = 110°C)

4. Power Dissipation : Ptot = 349 W (Tc = 25°C)

5. Junction temperature : Tj = -40 to +175 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: IKW25N120, K25T1202

 

IKW25N120T2 Datasheet PDF Download

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Part Number: IRG4PC50FD

Function: 600V, 70A, Fast CoPack IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Pinouts:

 

Description

This is 600V, 70A, IGBT. The IGBT is insulated-gate bipolar transistor.

Benefits :

1. Generation -4 IGBTs offer highest efficiencies available

2. IGBTs optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing

4. Designed to be a “drop-in” replacement for equivalent
industry-standard Generation 3 IR IGBTs

Features

1. Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. IGBT co-packaged with HEXFRED ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 70 A

4. Collector dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: IRG4PC50FDPBF

 

IRG4PC50FD Datasheet PDF Download