IXSH45N120 Datasheet PDF – 1.2kV, 75A, IGBT, Transistor

Part Number: IXSH45N120

Function: 1200V, 75A, High Voltage, Low Vce(sat) IGBT

Package: TO-247AD Type

Manufacturer: IXYS CORPORATION

Image and Pinouts:

IXSH45N120 datasheet

Description

This is 1200V, 75A, IGBT. The IGBT is insulated-gate bipolar transistor.

 

Applications

1. AC motor speed control

2. DC servo and robot drive

3. Uninterruptible power supplies (UPS)

4. Switch-mode and resonant-mode power supplies

5. Welding

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 75 A

4. Collector dissipation : Pc = 300 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Advantages :

1. Easy to mount with 1 screw (isolated mounting screw hole)

2. High power density

Other data sheets are available within the file:

IXSH45N120B, IXST45N120B

 

IXSH45N120 Datasheet PDF Download


IXSH45N120 pdf

IXGH60N60C3 Datasheet PDF – 600V, 60A, IGBT, Transistor

Part Number: IXGH60N60C3

Function: 600V, 60A, High Speed IGBT

Pacakge : TO-247AD Type

Manufacturer: IXYS CORPORATION

Image and Pinouts:

IXGH60N60C3 datasheet

 

Description

This is 600V, 60A, High Speed PT IGBTs for 40-100kHz switching.

1. Vces = 600 V

2. Ic110 = 60A

Features

1. Optimized for Low Switching Losses

2. Square RBSOA

3. Avalanche rated

4. International Standard Package

Advantages :

1. High Power Density

2. Low Gate Drive Requirement

Applications:

1. High Frequency Power Inverters

2. UPS

3. Motor Drives

4. SMPS

5. PFC Circuits

6. Battery Chargers

7. Welding Machines

8. Lamp Ballasts

Other data sheets are available within the file:

60N60C3, G60N60, IXGH60N60C3D1

 

IXGH60N60C3 Datasheet PDF Download


IXGH60N60C3 pdf