Part Number: IRG4PC50K

Function: 600V, 52A, UltraFast IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Pinouts:

 

Description

This is 600V, 52A, UltraFast IGBT. The IGBT is insulated-gate bipolar transistor.

 

Benefits :

1. As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT

2. Latest generation 4 IGBTs offer highest power density motor controls possible

3. This part replaces the IRGPC50K and IRGPC50M devices

Features

1. High short circuit rating optimized for motor control,tsc=10µs, @360V Vce(start), Tj= 125°C,Vge= 15V

2. Combines low conduction losses with high switching speed

3. Latest generation design provides tighter parameter distribution and higher efficiency than previous generations

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 52 A

4. Maximum Power Dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file:

IRG4PC50, IRG4PC50KDPbF

 

IRG4PC50K Datasheet PDF Download

Part Number: GB75DA120UP

Function: Ultrafast IGBT, 1200V, 75 A

Package: SOT-227 Type

Manufacturer: Vishay Semiconductors

Image:

 

Description

The GB75DA120UP is 1200V, 75A, Ultrafast IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

IGBTs are widely used in power electronic applications, such as motor drives, renewable energy systems, and power conversion systems, due to their high efficiency, fast switching speed, and low switching losses. They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

Features

• NPT Generation V IGBT technology

• Square RBSOA

• HEXFRED low Qrr, low switching energy

• Positive VCE(on) temperature coefficient

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

BENEFITS :

• Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

Other data sheets are available within the file: 75DA120UP

 

GB75DA120UP Datasheet PDF Download