Part Number: RJP63F3DPP-M0

Function: 630V, 40A, Silicon N Channel IGBT

Package: TO-220FL type

Manufacturer: Renesas Electronics

Image and Pinouts:

Description

This is 630V, 40A, Silicon N Channel IGBT.

Features

•  Trench gate and thin wafer technology (G6H series)

•  Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

•  High speed switching tf = 100 ns typ

•  Low leak current  ICES= 1 μA max

•  Isolated package TO-220FL

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 630 V

2. Gate to emitter voltage : VGES = ± 30 V

3. Collector current : Ic = 40 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: RJP63F, RJP63F3, RJP63F3DPP

 

RJP63F3DPP-M0 Datasheet PDF Download