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GAE100BA60 Datasheet PDF – 600V, 100A, IGBT, Transistor

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Part Number: GAE100BA60

Function: 600V, 100A, IGBT MODULE

Manufacturer: SanRex Corporation

Image and Pinouts:

GAE100BA60 datasheet

 

Description

SanRex IGBT Module GAE100BA60 is designed for high speed, high current
switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode (trr=0.1 μs) reverse connected across IGBT.

Features

1. IC＝100A VCES＝600V

2. VCE〔sat〕＝2.3V Typ

3. t f＝0.10μs Typ

4. Soft recovery diode

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 100 A

4. Total Power Dissipation : Pc = 400 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -40 to +125 °C

 

Applications:

1. Brake for motor control (chopper)

Other data sheets are available within the file: 100BA60

 

GAE100BA60 Datasheet PDF Download


GAE100BA60 pdf

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IRG4PC50S-P Datasheet PDF – 600V, 70A, IGBT, Transistor

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Part Number: IRG4PC50S-P

Function: 600V, 70A, Standard Speed IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Image and Pinouts:

IRG4PC50S-P datasheet

 

Description

The IRG4PC50S-P is 600V, 70A, IGBT. The IGBT is insulated-gate bipolar transistor.

 

Features

1. Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. Industry standard TO-247AC package

4. Surface Mountable

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 70 A (Tc = 25°C)

4. Maximum Power Dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file:

IRG4PC50S, IRG4PC50SP, IRG4PC50SPBF

 

IRG4PC50S-P Datasheet PDF Download


IRG4PC50S-P pdf