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RJP30E2 Datasheet PDF – RJP30E2DPK-M0, 360V, 35A, IGBT

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This is one of the semiconductor types.

Part Number: RJP30E2, RJP30E2DPK-M0

This product has Silicon N-Channel 360V, 35A, IGBT High Speed Power Switching functions.

Package: TO-220FL Type

The manufacturer of the product is Renesas Electronics.

See the preview image and the PDF file for more information.

Image and Pinouts:
RJP30E2

Description

This is 360V, 35A, IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max

RJP30E2 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP30E2 Datasheet PDF

RJP30E2DPK-M0 pdf

Other data sheets are available within the file: RJP30E2DPK-M0, RJP30E2DPK-M0-T0

FGP20N6S2 Datasheet PDF – 600V, N-Ch, IGBT, TO-220

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Part Number: FGP20N6S2

Function: 600V, SMPS II Series N-Channel, IGBT

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FGP20N6S2 datasheet

 

Description

The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.

Features

• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon

SMPS II LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

Other data sheets are available within the file:

20N6S2, FGB20N6S2, FGB20N6S2D, FGB20N6S2DT, FGH20N6S2

 

FGP20N6S2 Datasheet PDF Download


FGP20N6S2 pdf