Marking : H30R1202, Part Number: IHW30N120R2
Function: 1200V, 30A, IGBT
Package: PG-TO-247-3 Type
Manufacturer: Infineon
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Description
This is 1200V, 30A, Reverse Conducting IGBT with monolithic body diode
Features
1. Powerful monolithic body diode with very low forward voltage
2. Body diode clamps negative voltages
3. TrenchStop and Fieldstop technology for 1200V applications offers :
(1) Very tight parameter distribution
(2) High ruggedness,temperature stable behavior
4. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
5. Low EMI
6. Qualified according toJEDEC for target applications
7. Pb-free lead plating; RoHScompliant
Pinout:
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1200 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 30 A (Tc = 100°C)
4. Power dissipation : Ptot = 390 W
5. Operating junction temperature : Tj = -45 to +175 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications:
1. Induction cooking and microwave ovens
2. Soft switching applications and resonant converters
H30R1202 Datasheet
