Part Number: G5N150UF, SGS5N150UF
Function: 1500V, IGBT ( Insulated Gate Bipolar Transistor )
Package: TO-220F Type
Manufacturer: Fairchild Semiconductor
Image and Pinouts:
Description
This is IGBT. Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The G5N150UF is designed for the Switching Power Supply applications.
Features
1. High Speed Switching
2. Low Saturation Voltage : Vce(sat)= 4.7 V @ IC = 5A
3. High Input Impedance
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1500 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 10 A
4. Maximum Power Dissipation : Pc = 50 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Application:
1. Switching Power Supply
2. High Input Voltage Off-line Converter
Other data sheets are available within the file: SGS5N150UF, SGS5N150UFTU
G5N150UF Datasheet PDF
