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G7S313U Datasheet PDF – 330V, PDP Trench IGBT – IR

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: G7S313U, IRG7S313UPbF

Function  : 330V, PDP Trench IGBT

Package: TO-263AB Type

Manufacturer: International Rectifier ( http://www.irf.com/ )

Image

G7S313U pdp trench igbt

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSE rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Pinout

G7S313U datasheet pinout

Features

1. Advanced Trench IGBT Technology

2. Optimized for Sustain and Energy Recovery circuits in PDP applications

3. Low VCE(on)and Energy per Pulse (EPULSE TM) for improved panel efficiency

4. High repetitive peak current capability

5. Lead Free package

 

G7S313U Datasheet


 

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45G128 Datasheet PDF – 430V, 200A, IGBT – GT45G128

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Part Number: 45G128, GT45G128

Function: 430V, 200A, Discrete IGBT

Package : TO-220SIS Type

Manufacturer: Toshiba

Image :
45G128

Applications  : Plasma display panels

Features of the Toshiba Discrete IGBTs

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

Pinouts: 45G128 pinouts

Construction
The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure.
Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction.

45G128 Datasheet

 

45G128 Datasheet PDF Download


45G128 pdf