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IRGP6630 Datasheet PDF – 600V, 47A, IGBT, Transistor

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Part Number: IRGP6630

Function: 600V, 47A, IGBT, Transistor

Package: TO-247AC, TO_247AD Type

Manufacturer: International Rectifier

Image and Pinouts:

IRGP6630 datasheet

 

Description

This is 600V, 47A, Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.

 

Features

1. Low VCE(ON)and Switching Losses

2. Optimized Diode for Full Bridge Hard Switch Converters

3. Square RBSOA and Maximum Temperature of 175°C

4. 5µs Short Circuit

5. Positive VCE (ON)Temperature Co-efficient

6. Lead-free, RoHS compliant

 

Benefits :

1. High Efficiency in a Wide Range of Applications

2. Optimized for Welding and H Bridge Converters

3. Improved Reliability due to Rugged Hard Switching Performance and High Power Capability

4. Excellent Current Sharing in Parallel Operation

Pinouts:

components

Other data sheets are available within the file:

IRGP6630D-EPbF, IRGP6630DPbF

 

IRGP6630 Datasheet PDF Download


IRGP6630 pdf

G4PC4OUD Datasheet PDF – 600V, 40A, UltraFast IGBT

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Part Number: G4PC4OUD, Correct Number :  G4PC40UD, IRG4PC40UD.

Fuction : 600V, 40A, UltraFast IGBT

Package: TO-247AC Type

Manufacturer :  International Rectifier , Infineon Technologies AG

See the preview image and the PDF file for more information.

Image and Pinouts:

G4PC4OUD datasheet

Description

This is 600V, 40A, IGBT.

The IGBT is INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

Features

1. UltraFast : Optimized for high operating frequencies 8-40 kHz in hard switching, >200  kHz in resonant mode

2. Generation4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

Benefits :

1. Generation -4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 40 A (Tc = 25°C)

4. Maximum Power Dissipation : Pc = 160 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PC4OUD Datasheet PDF Download

G4PC40UD pdf

Other data sheets are available within the file: IRG4PC4OUD