igbt

GB20B60PD1 PDF Datasheet – IRGB20B60PD1 – 600V, IGBT

Posted on by pinout

Part Number: GB20B60PD1, IRGB20B60PD1

Function: 600V, SMPS IGBT

Package: TO-220AB

Manufacturer: International Rectifier

Images:

GB20B60PD1 pdf pinout

Description

GB20B60PD1 is 600V, SMPS. The IGBT is insulated-gate bipolar transistor.

It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

 

Features

1. NPT Technology, Positive Temperature Coefficient

2. Lower VCE(SAT)

3. Lower Parasitic Capacitances

4. Minimal Tail Current

5. HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

6. Tighter Distribution of Parameters

7. Higher Reliability

 

Benefits

1. Parallel Operation for Higher Current Applications

2. Lower Conduction Losses and Switching Losses

3. Higher Switching Frequency up to 150kHz

GB20B60PD1 datasheet igbt

Applications

1. Telecom and Server SMPS

2. PFC and ZVS SMPS Circuits

3. Uninterruptable Power Supplies

4. Consumer Electronics Power Supplies

 

GB20B60PD1 PDF Datasheet

G4BC20KD PDF Datasheet – 600V, IGBT – IRG4BC20KD

Posted on by pinout

This post explains for the IGBT.

The Part Number is IRG4BC20KD, G4BC20KD.

The function of this semiconductor is 600V, 9A, UltraFast IGBT.

The package is TO-220AB Type

Manufacturer: International Rectifier

Preview images :G4BC20KD pdf pinout

Description

G4BC20KD IS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-220AB package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A n-ch an nel Benefits

 

G4BC20KD datasheet igbt

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter Voltage: Vces = 600 V

2. Gate to Emitter Voltage: VGes = ± 20 V

3. Collector Current: Ic = 16 A

4. Drain power dissipation: PD = 60 W

5. Operating Junction Temperature: Tch = -55 to +150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Benefits:

• Latest generation 4 IGBTs offer highest power density motor controls possible

• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

• This part replaces the IRGBC20KD2 and IRGBC20MD2 products

• For hints see design tip 97003

 

G4BC20KD PDF Datasheet