MOSFET

60R580P PDF – 600V, 8A, N-channel MOSFET

Posted on by pinout

This post explains for the MOSFET.

The Part Number is 60R580P, MMIS60R580PTH.

The function of this semiconductor is N-channel MOSFET.

The package is TO-251-VS Type

Manufacturer: MagnaChip

Images:

60R580P transistor

 

Description

60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.

Features:

1. Low Power Loss by High Speed Switching and Low On-Resistance

2. 100% Avalanche Tested

3. Green Package – Pb Free Plating, Halogen Free

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Drain Power Dissipation: Pd = 70 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

60R580P pdf datasheet

 

Applications:

1. PFC Power Supply Stages

2. Switching Applications

3. Adapter

4. Motor Control

5.  DC – DC Converters

 

60R580P PDF Datasheet

PJA138K PDF Datasheet – 50V, 500mA, N-Ch, MOSFET

Posted on by pinout

Part Number: PJA138K

Function: 50V, 500mA, N-Channel Mode MOSFET

Package: SOT-23 Type

Manufacturer: Pan Jit International

Images:PJA138K pdf pinout

Description

The PPJA138K is 50V, N-Channel Enhancement Mode MOSFET.

Features

1. RDS(ON) , VGS@10V, ID@500mA<1.6Ω

2. RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω

3. RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω

4. Advanced Trench Process Technology

5. Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

6. ESD Protected

PJA138K datasheet

Mechanical Data :

1. Case: SOT-23 Package

2. Terminals : Solderable per MIL-STD-750, Method 2026

3. Approx. Weight: 0.0003 ounces, 0.0084 grams

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 500 mA

4. Power Dissipation: Pd =500 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

PJA138K PDF Datasheet