Part Number: HY1607

Function: 68V, 70A, N-Channel MOSFET

Package: TO-252-2L, TO-251-3L Type

Manufacturer: HOOYI

Images:

 

Description

HY1607 is 68V, 70A, N-Channel Enhancement Mode MOSFET. 

Features

• 68V/70A, RDS(ON)= mΩ (typ.) @ VGS=10V

• 100% avalanche tested

• Reliable and Rugged

• Lead Free and Green DevicesAvailable (RoHS Compliant)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 68 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 70 A

4. Channel temperature: Tch = 175 °C

5. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. Power Management for Inverter Systems

HY1607 PDF Datasheet

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2611, 2SK2611

Function: 900V, 9A, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba Semiconductor

Description

The K2611 is TOSHIBA, 900V, 9A, Silicon N Channel MOS Type Field Effect Transistor.

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

 

Features

1. Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement−mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Applications:

1. DC−DC Converter

2. Relay Drive and Motor Drive

K2611 PDF Datasheet