MOSFET

30N45 PDF Datasheet – 450V, 30A, N-Ch, MOSFET

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Part Number: 30N45, IXTH30N45, IXTH30N50

Function: 450V, 30A, N-Channel Enhancement Mode Mega MOSFET

Package: TO-247AD

Manufacturer: IXYS

Images:30N45 pdf mosfet

Description

30N45 is 450V, 30A, N-Channel Enhancement Mode Mega MOSFET.

Features

• International standard package JEDEC TO-247 AD

• Low R DS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• High commutating dv/dt rating

• Fast switching times

30N45 datasheet pinout

Applications:

• Switch-mode and resonant-mode power supplies

• Motor control • Uninterruptible Power Supplies (UPS)

• DC choppers Advantages

• Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)

• Space savings

• High power density © 1997 IXYS All rights reserved 94569D(5/97)

30N45 PDF Datasheet

K6A650 PDF Datasheet – 650V, N-Ch, MOSFET ( TK6A65D )

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Part Number: K6A650, Correct Part Number: K6A65D, TK6A65D

Function: 650V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K6A650 transistor datasheet mosfet TK6A65D

Description

The K6A650 is 650V, 6A, N-channel MOSFET.

Features:

1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Applications:

1.Switching Regulator

Pinout:

K6A650 pinout K6A650D

[…]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS =  ± 30 V
3. Drain current: ID =  6 A
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = +150 °C

K6A65D Datasheet


K6A650-pdf pdf