This post explains for the MOS Power Transistor.

The Part Number is IPD13N03LA, 13N03LA.

The function of this semiconductor is 25V, 30A, MOSFET.

The package is TO-252, TO-251 Type

Manufacturer: Infineon Technologies

Preview images :

Description

13N03LA is OptiMOS2 Power-Transistor. OptiMOS 2 is an advanced generation of power transistors developed by Infineon Technologies, a semiconductor manufacturer. These transistors belong to the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family and are specifically designed for power electronics applications, where efficient switching of high currents and voltages is required.

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC1) for target applications

• N-channel

• Logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 30 A

4. Total Power Dissipation: Ptot = 46 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

13N03LA PDF Datasheet

Part Number: 20N60S5, SPP20N60S5

Function: 600V, 20A, MOSFET

Packag : TO-220 Type

Manufacturer: Infineon Technologies

Images:

Description

20N60S5 is Cool MOS Power Transistor. “CoolMOS” is a brand name used by Infineon Technologies for a family of high-performance power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) designed for various power electronics applications. These MOSFETs are known for their efficiency, low power losses, and thermal performance, which contribute to the term “CoolMOS.”

Power MOSFETs are semiconductor devices commonly used in power conversion and switching applications. They come in various types, including N-channel and P-channel MOSFETs, and they play a crucial role in regulating and controlling the flow of electrical current in electronic circuits.

Features :

• New revolutionary high voltage technology

• Worldwide best RDS(on) in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 20 A

4. Total Power Dissipation: Ptot = 208 W

5. Operating temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

20N60S5 PDF Datasheet