Part Number: QM3024M6

Function: N-Channel 30V, 57A, Fast Switching MOSFET

Package: PRpak 5×6 Pin Type

Manufacturer: UBIQ Semicondcutor ( www.ubiq-semi.com )

Images:

Description

The QM3024M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The device meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

Features

1. Advanced high cell density Trench technology

2. Super Low Gate Charge

3. Excellent CdV/dt effect decline

4. 100% EAS Guaranteed

5. Green Device Available

Applications:

1. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA

2. Networking DC-DC Power System

3. Load Switch

QM3024M6 PDF Datasheet

Full Part Number is FMH23N50E.

The Function is N-Channel Power MOSFET

The package is TO-3P(Q) type.

The manufacturer of the product is Fuji Electric.

See the preview image and the PDF file for more information.

Images:

Description

The 23N50E is 500V, 23A, N-Channel Silicon Power MOSFET.

Pinouts:

 

Features

1. Maintains both low power loss and low noise

2. Lower RDS(on) characteristic

3. More controllable switching dv/dt by gate resistance

4. Smaller VGS ringing waveform during switching

5. Narrow band of the gate threshold voltage (3.0±0.5V)

6. High avalanche durability

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 23 A

4. Total Power Dissipation: Pd = 2.5 W

5. Avalanche energy: Ear = 31.5 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching regulators

2. UPS (Uninterruptible Power Supply)

3. DC-DC converters

23N50E PDF Datasheet

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