MOSFET archives - Page 144 of 1244

Description

P6NK90ZFP is 900V, 5.8A, Zener-Protected SuperMESH Power MOSFET.

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Features

1. TYPICAL RDS(on) = 1.75 Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. GATE CHARGE MINIMIZED

5. VERY LOW INTRINSIC CAPACITANCES

6. VERY GOOD MANUFACTURING REPEATIBILITY

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

3. LIGHTING […]

This post explains for the MOSFET.

The Part Number is MDF10N65B.

The function of this semiconductor is 650V, 10A, N-Channel MOSFET.

The package is TO-220F Type

Manufacturer: MagnaChip

Preview images :

MDF10N65B pinout mosfet

Description

The MDF10N65B MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. VDS = 650V

2. ID = 10.0A

3. RDS(ON) ≤ 1.0Ω @ VGS = 10V @ VGS = 10V

Applications:

1. Power Supply

2. PFC

3. High Current, High Speed Switching

MDF10N65B pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Allowable Power Dissipation: Pd = 47.7 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

MOSFET

P6NK90ZFP PDF Datasheet – 900V, MOSFET – STP6NK90ZFP

Description

Features

P6NK90ZFP PDF Datasheet

MDF10N65B PDF Datasheet – 650V, 10A, N-Ch, MOSFET

Description

Features

MDF10N65B PDF Datasheet