This is one of the types of MOSFETs and is a kind of transistor.

Part Number: MDF11N65B

Function: N-Channel MOSFET, 650V, 12A

Package: TO-220F type

Manufacturer: MagnaChip

Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. Drain to source voltage : VDS = 650V

2. Drain current: ID = 12A @ VGS = 10V

3. RDS(ON) ≤ 0.65Ω @ VGS = 10V

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain power dissipation : PD = 49.6 W

5. Single pulse avalanche energy : Eas = 750 mJ

6. Repetitive avalanche energy : Ear = 18.1 mJ

7. Channel temperature: Tch = -55 to +150 °C

8. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Power Supply

2. PFC

3. High Current, High Speed Switching

MDF11N65B PDF Datasheet

This post explains for the MOSFET K3567.

The Part Number is 2SK3567.

The function of this semiconductor is 600V, 3.5A, N-Channel MOSFET

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

Description

K3567 is Silicon N Channel MOS Type Field Effect Transistor. A 600V silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) refers to a specific type of MOSFET that operates as an N-channel transistor and has a maximum voltage rating of 600 volts (V).

1. N-Channel: The MOSFET operates as an N-channel transistor, meaning it has an N-type channel between the drain and source terminals. In an N-channel MOSFET, a positive voltage applied to the gate terminal controls the flow of current between the drain and source.

2. Voltage Rating: The MOSFET has a maximum voltage rating of 600V, indicating it can handle a maximum voltage of 600V without the risk of damage. This voltage rating is significant for applications that require high-voltage operation, such as power supplies, motor control, inverters, and other high-power systems.

Features:

• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)

• High forward transfer admittance: |Yfs| = 2.5S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 600 V)

• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) […]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.5 A

4. Drain power dissipation : PD = 35 W

5. Single pulse avalanche energy : Eas = 201 mJ

6. Avalanche curren : Iar = 3.5 A

7. Repetitive avalanche energy : Ear = 3.5 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K3567 PDF Datasheet

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